Кремний. Si. Карбид кремния. SiC
Выставка проходит 1 мая – 31 мая 2008 г.
КНИГИ
-
Егорочкин А.Н., Воронков М.Г. Электронное строение органических соединений кремния, германия и олова. -Новосибирск, 2000.-614 с.
-
Зубехин А.П. и др. Визит королю Si / А.П.Зубехин, П.П.Гайджуров, М.М.Лось. -Ростов н/Д, 1991.-222 с.
-
Рохов Е.Д. Мир кремния/Пер. с англ.А.Д.Никитина; Под ред.проф. М.В.Соболевского. -М., 1990.-149с.
-
Силициды: Сб.ст. / Отв.ред. Л.И.Винокурова, В.Ю.Иванов. -М., 1991.-136 с.
-
Amorphous and Crystalline Silicon Carbide II. Proc. of the 2nd Intern.Conf., Santa Clara, C.A., December 15-16, 1988. Ed.: M.M.Rahman, C,Y.-W.Yang, G.L.Harris. -Berlin etc., 1989.-X, 232 p.
-
Amorphous and Crystalline Silicon Carbide IV. Proc. of the 4th Intern.Conf., Santa Clara, C.A., October 9-11, 1991. Ed.: M.M.Rahman, C,Y.-W.Yang, G.L.Harris. -Berlin etc., 1989.-XII, 433 p.
-
Cerofolini G.F., Meda L. Physical Chemistry of, in and on silicon. -Berlin etc., 1989. -VIII, 122 p.
-
Characteristics of a SiC microwave adsorber for damped cavity / Izawa M., Koseki T., Kamiya Y., Toyomasu T. -Tokyo, 1994.-16 p.
-
Colinge J.P. Silicon-on-insulator technology: materials to VLSI. 3d ed. -Boston etc., 2004.-X, 366 p.
-
Ekelund M. Preparation of silicon nitride powder by carbothermal reduction of silica in a nitrogen atmosphere: Doctoral diss. -Stockholm, 1991.-58 p.
-
Organosilicon Chemistry IV. From Molecules to Materials. Ed. by N.Auner and J.Weis.- Cop. 2000.-XVIII, 834 p.
-
Organosilicon Chemistry VI. From Molecules to Materials. Vol.1. Ed. by N.Auner and J.Weis.- Cop. 2005 -XVIII, 600 p.
-
Organosilicon Chemistry VI. From Molecules to Materials. Vol.2. Ed. by N.Auner and J.Weis.- Cop. 2005.-XVIII, 601-1020.
-
Porous silicon science and technology: Winter school, Les Houches, 8 to 12 Febr. 1994. Ed.: Vial J.-C., Derrien J.-Berlin etc., Cop.1995.
-
Silicon Chemistry: Proc.of the Eighth Intern.symp.on organosilicon chemistry, St. Louis, Mo., USA, June 7-12, 1987. -Chichester, 1988.-XI, 565 p.
-
The Si-SiO2 system / Ed. by P.Balk. -Amsterdam etc., 1988.-IX, 356 p.
-
Stobierski L. Wedlik krzemu: Budowa, wlasciwosci i otrzymywanie. -Krakow, 1996.-114p.
ЖУРНАЛЫ
-
IEICE Transactions on Electronics. -1997.-Vol.E80-C, N 3.
-
Journal of Crystal Growth. -2006.-Vol.287, N 2, p.402-407.
-
Journal of Crystal Growth. -2007.-Vol.298, 284-287; p.826-830.
-
Journal of Crystal Growth. -2007.-Vol.301-302.
-
Journal of Crystal Growth. -2007.-Vol.306, N 1, p.52-64.
-
Journal of Crystal Growth. -2007.-Vol.306, N 2, p.254-261; 452-457; 480-490.
-
Journal of Crystal Growth. -2007.-Vol.308, N 1, p.26-29; 41-49.
-
Journal of Crystal Growth. -2007.-Vol.308, N 2, p.278-282.
-
Journal of Electronic Materials. -1995.-Vol.24, N 4, p.211-419.
-
Journal of Electronic Materials. -2003.-Vol.32, N 5, p.287-469.
-
Journal of Molecular Structure. -1994.-Vol.313, N 1.
-
Journal of Physics: Condensed Matter. -2003.-Vol.15, N 39, p.2771-2982.
-
Materials Science and Engineering. B. -1999.-Vol.61-62.
-
Materials Science and Engineering. R. -1994.-Vol.13, N 3-4.
-
Nukleonika. -1997.-Vol.42, N 2, p.273-620.
-
Physica. B. -2006.-Vol.376-377, p.224-226; 378-381.
-
Physica. B. -2006.-Vol.385-386, pt.1, p.180-183.
-
Physica. B. -2007.-Vol.400, N 1-2, p.287-291.
-
Physica. B. -2007.-Vol.401-402, p.148-150, 151-154, 171-174, 519-522, 523-526, 527-530, 531-536, 560-563, 572-577, 699-701.
-
Physica Status Solidi. A. -1997.-Vol.162, N 1, Spec.iss.
-
Physica Status Solidi. B. -1997.-Vol.202, N 1, Spec.iss.
-
Physica Status Solidi. C. -2004.-Vol.1, N 5, Spec.iss., p.1092-1323.
-
Physica Status Solidi. C. -2005.-Vol.2, N 9, p.3180-3509.
-
Solid State Communications. -2007.-Vo.144, N 7-8, p.277-281.
-
Surface Science. -2006.-Vol.600, N 12, p.2623-2628.
-
Surface Science. -2007.-Vol.601, N 18, p.4506-4509.
-
Surface Science. -2007.-Vol.601, N 21, p.4881-4887.
-
Surface Science. -2007.-Vol.601, N 24, p.5740-5743; 5744-5749.
-
Surface Science Reports. -1997.-Vol.29, N 3-4.
-
Thin Solid Films. -1995.-Vol.255, N 1-2.
-
Thin Solid Films. -1996.-Vol.276, N 1-2.
-
Thin Solid Films. -1997.-Vol.297, N 1-2.